Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter

Autores/as

  • Eduardo Gomes Mendonça Instituto de Fomento e Coordenação Industrial ,
  • Tassio Cortês Cavalcante Instituto de Estudos Avançados ,
  • Rafael Galhardo Vaz Instituto de Estudos Avançados ,
  • Evaldo Carlos Fonseca Pereira Junior Instituto de Estudos Avançados ,
  • Odair Lelis Gonçalez Instituto de Estudos Avançados

DOI:

https://doi.org/10.15392/2319-0612.2023.2117

Palabras clave:

RADFET, DOSIMTER, PMOS, Gamma-radiation, Threshold voltage

Resumen

Radiation Sensitive MOSFETs (RADFETs) have been commonly used as ionizing radiation dosimeters. The threshold voltage variation is the main transistor parameter used for radiation dosimetry, as this voltage variation is directly related to total dose and it can be easily determined by using simple measurement and biasing circuits. In this work it is presented a novel experimental method to determine the optimal drain-source current value to be supplied to a p-type MOSFET used in a traditional RADFET configuration (diode connected transistor) for monitoring of the accumulated X- and gamma-radiation dose. Experimental results from irradiations with 60Co gamma-rays and comparison measurements with semiconductor analyzer indicate that lower supply current values result in more precise dose measurement results.

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Referencias

MA, T. P.; DRESSENDORFER, P. V. Ionizing Radiation Effects in MOS Devices and Circuits. 1st ed. New York: Wiley-Interscience, 1989.

SCHWANK, J. R.; SHANEYFELT, M. R.; FLEETWOOD, D. M.; FELIX, J. A.; DODD, P. E.; PAILLET, P.; FERLET-CAVROIS, V. Radiation Effects in MOS Oxides. IEEE Trans on Nucl Sci, v. 55, n. 4, p. 1833-1853, 2008.

HOLMES-SIEDLE, A.; ADAMS, L. RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimeters. Int. J Radiat Appl Instrum Radiat Phys Chem, v. 28, n. 2, p. 235-244, 1986.

PEJOVIĆ, M. M. P-channel MOSFET as a sensor and dosimeter of ionizing radiation. Facta Universitatis Series: Electronics and Energetics, v. 29, n. 4, p. 509 – 541, 2016. DOI: 10.2298/FUEE1604509. Available at: < http://www.doiserbia.nb.rs/img/doi/0353-3670/2016/0353-36701604509P.pdf >. Last accessed: 29 Sept. 2022.

TEKIN, N.; SARIMLI, F.; SEZER, Z. A.; YILMAZ, E. Electronic reader design with RADFET (PMOSFET) dosimeter sensor, RAP Conf. Proc., vol. 4, 2019, 122–124. ISSN 2466-4626 (online). DOI: 10.37392/RapProc.2019.24. Available at: < https://www.rap-proceedings.org/papers/RapProc.2019.24.pdf >. Last accessed: 29 Sept. 2022.

RISTIĆ, G. S.; ILIĆ, S. D.; VELJKOVIĆ, S.; JEVTIĆ, A. S.; DIMITRIJEVIĆ, S.; PALMA, A. J.; STANKOVIĆ, S.; ANDJELKOVIĆ, M. S. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics, v. 11, n. 6, p. 918, 2022. Available at: < https://doi.org/10.3390/electronics11060918 >. Last accessed: 29 Sept. 2022.

ASENSIO, L. J.; CARVAJAL, M. A.; LÓPEZ-VILLANUEVA, J. A.; VILCHES, M.; LALLENA, A. M.; PALMA, A. J. Evaluation of a low-cost commercial mosfet as radiation dosimeter. Sensors and Actuators A: Physical, v. 125, p. 288-295, 2006. Doi: https://doi.org/10.1016/j.sna.2005.08.020. Available at: < https://www.sciencedirect.com/science/article/pii/S0924424705004802 >. Last accessed: 29 Sept. 2022.

MENDONÇA, E. G.; GONÇALEZ, O. L. A simple model of the accumulation of trapped ionization charges for radfet dosimeters. Brazilian Journal of Development, v. 8, n. 4, p. 28753-28759, 2022. Doi: https://doi.org/10.34117/bjdv8n4-391. Available at: < https://ojs.brazilianjournals.com.br/ojs/index.php/BRJD/article/view/46805 >. Last accessed: 29 Sept. 2022.

ESCC - European Space Components Coordination. Total Dose Steady-State Irradiation Test Method, ESCC Basic Specification nº 22900, Issue 5, June 2016. Available at: < http://escies.org/escc-specs/published/22900.pdf >. Last accessed 14 Apr. 2023.

KEITHLEY. Model 4200-SCS Semiconductor Characterization System User Manual. 4200-900-01 Rev. K / February 2017. Available from < https://download.tek.com/manual/4200-900-01K_Feb2017_User.pdf >. Last access: 17 Apr. 2023.

FLEETWOOD, D. M.; WINOKUR, P. S.; REBER JR, R. A.; MEISENHEIMER, T. L.; SCHWANK, J. R.; SHANEYFELT, M. R; RIEWE, L. C. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices. Journal of Applied Physics, v. 73, p. 5058, 1993.

TSIVIDIS, Y.; MCANDREW, C. Operation and Modeling of the MOS Transistor, 3rd ed. Oxford: Oxford University Press, 2011. 723p.

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Publicado

2023-05-24

Número

Vol. 11 Núm. 1A (Suppl.) (2023): RADIO 2022

Sección

Articles

Categorías

Licencia

Derechos de autor 2023 Brazilian Journal of Radiation Sciences (BJRS)

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Cómo citar

Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter. Brazilian Journal of Radiation Sciences (BJRS), Rio de Janeiro, Brazil, v. 11, n. 1A (Suppl.), p. 01–12, 2023. DOI: 10.15392/2319-0612.2023.2117. Disponível em: https://bjrs.org.br/revista/index.php/REVISTA/article/view/2117. Acesso em: 17 jul. 2025.