Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry

Autores/as

  • Josemary A. C. Gonçalves Instituto de Pesquisas Energéticas e Nucleares image/svg+xml
  • Carmen Cecília Bueno Instituto de Pesquisas Energéticas e Nucleares image/svg+xml
  • Fabio de Camargo Instituto de Pesquisas Energéticas e Nucleares image/svg+xml
  • Kelly Pascoalino Instituto de Pesquisas Energéticas e Nucleares image/svg+xml

DOI:

https://doi.org/10.15392/2319-0612.2022.1789

Palabras clave:

alpha spectrometry, Si diode, PIN photodiode

Resumen

In this work, the insensitive layer thickness of a PIN photodiode (SFH206K - Osram) has been measured by varying the incident angle of a collimated monoenergetic alpha particle beam. This technique is based on the fact that, except for the intrinsic uncertainties of the emission and straggling of alpha particles, their trajectories at different incident angles are distinct, with smaller ones corresponding to the incidence perpendicular to the detector surface. The result obtained (711 ± 23) nm, less than 1% of the intrinsic layer thickness, besides validating the employed method, demonstrates that the diode herein investigated is suitable for high resolution charged particle spectrometry.   

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Referencias

GOODA, P. H., GILBOY, W. B. High resolution alpha spectroscopy with low cost photodiodes. Nucl. Instrum. Methods Phys. Res. v. 255, p. 222–224, 1987.

BUENO, C. C., GONCALVES, J. A. C., SANTOS, M. D. DE S. The performance of low-cost commercial photodiodes for charged particle and X-ray spectrometry. Nucl. Instrum. Methods Phys. Res. v. 371, p. 460–464, 1996.

KHOURY, H. J., SCHELIN, H., SOBOLL, D., LUNELLI, N., BAPTISTA, C. Evaluation of comercial silicon diode for electron dosimetry. Nucl. Instrum. Methods Phys. Res. v. 580, p. 537–539, 2007.

GONCALVES, J. A. C., MANGIAROTTI, A., BUENO, C. C. Current response stability of a commercial PIN photodiode for low dose radiation processing applications. Radiat. Phys. Chem. v. 167, p. 108276, 2020.

MALAFRONTE, A. A., PETRI, A. R., GONÇALVES, J. A. C., BARROS, S. F., BUENO, C. C., MAIDANA, N. L., MANGIAROTTI, A., MARTINS, M. N., QUIVY, A. A., VANIN, V. R. A low-cost small-size commercial PIN photodiode: I. electrical characterisation and low-energy photon spectrometry. Radiat. Phys. Chem. v. 179 p. 109103-109113, 2021.

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Publicado

2022-12-04

Número

Sección

INAC 2021_XV ENAN

Cómo citar

Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry . Brazilian Journal of Radiation Sciences (BJRS), Rio de Janeiro, Brazil, v. 10, n. 3B (Suppl.), 2022. DOI: 10.15392/2319-0612.2022.1789. Disponível em: https://bjrs.org.br/revista/index.php/REVISTA/article/view/1789. Acesso em: 17 jul. 2025.