Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry

Authors

  • Josemary A. C. Gonçalves Instituto de Pesquisas Energéticas e Nucleares
  • Carmen Cecília Bueno Instituto de Pesquisas Energéticas e Nucleares
  • Fabio de Camargo Instituto de Pesquisas Energéticas e Nucleares
  • Kelly Pascoalino Instituto de Pesquisas Energéticas e Nucleares

DOI:

https://doi.org/10.15392/2319-0612.2022.1789

Keywords:

alpha spectrometry, Si diode, PIN photodiode

Abstract

In this work, the insensitive layer thickness of a PIN photodiode (SFH206K - Osram) has been measured by varying the incident angle of a collimated monoenergetic alpha particle beam. This technique is based on the fact that, except for the intrinsic uncertainties of the emission and straggling of alpha particles, their trajectories at different incident angles are distinct, with smaller ones corresponding to the incidence perpendicular to the detector surface. The result obtained (711 ± 23) nm, less than 1% of the intrinsic layer thickness, besides validating the employed method, demonstrates that the diode herein investigated is suitable for high resolution charged particle spectrometry.   

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References

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Published

2022-12-04

How to Cite

Gonçalves, J. A. C., Bueno, C. C., de Camargo, F., & Pascoalino, K. . (2022). Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry . Brazilian Journal of Radiation Sciences, 10(3B (Suppl.). https://doi.org/10.15392/2319-0612.2022.1789

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Section

INAC 2021_XV ENAN