Experimental method for determining the supply current of a PMOS power transistor for use as a RADFET dosimeter

Eduardo Gomes Mendonça; Tassio Cortês Cavalcante; Rafael Galhardo Vaz; Evaldo Carlos Fonseca Pereira Junior; Odair Lelis Gonçalez

doi:10.15392/2319-0612.2023.2117

Authors

Eduardo Gomes Mendonça Instituto de Fomento e Coordenação Industrial
Tassio Cortês Cavalcante Instituto de Estudos Avançados
Rafael Galhardo Vaz Instituto de Estudos Avançados
Evaldo Carlos Fonseca Pereira Junior Instituto de Estudos Avançados
Odair Lelis Gonçalez Instituto de Estudos Avançados

DOI:

https://doi.org/10.15392/2319-0612.2023.2117

Keywords:

RADFET, DOSIMTER, PMOS, Gamma-radiation, Threshold voltage

Abstract

Radiation Sensitive MOSFETs (RADFETs) have been commonly used as ionizing radiation dosimeters. The threshold voltage variation is the main transistor parameter used for radiation dosimetry, as this voltage variation is directly related to total dose and it can be easily determined by using simple measurement and biasing circuits. In this work it is presented a novel experimental method to determine the optimal drain-source current value to be supplied to a p-type MOSFET used in a traditional RADFET configuration (diode connected transistor) for monitoring of the accumulated X- and gamma-radiation dose. Experimental results from irradiations with ⁶⁰Co gamma-rays and comparison measurements with semiconductor analyzer indicate that lower supply current values result in more precise dose measurement results.

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