Calibration coefficients of epitaxial diodes used in diagnostic radiology and computed tomography beams

Authors

  • Josemary A. C. Gonçalves Instituto de Pesquisas Energéticas e Nucleares
  • Patrícia de Lara Antonio Instituto de Pesquisas Energéticas e Nucleares
  • Linda V. E. Caldas Instituto de Pesquisas Energéticas e Nucleares
  • Carmen C. Bueno Instituto de Pesquisas Energéticas e Nucleares

DOI:

https://doi.org/10.15392/2319-0612.2024.2576

Keywords:

Epitaxial Diode, Rad-hard Si diode, Dosimetry, Calibration coefficients

Abstract

The assessment of the calibration coefficients of an epitaxial diode, previously characterized for diagnostic radiology (RQR qualities) and computed tomography (RQT qualities) dosimetry, is reported in this work. The diode, with an n-type epitaxial layer (50 µm) grown on a thick (300 µm) Czochralski silicon substrate, is directly connected to an electrometer Keithley 6517B in the photovoltaic mode and exposed to X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS. Under this operational condition, the dosimetric quantity is the dose rate correlated with the output current signal from the diode when exposed to radiation. The corresponding collected charge (the integral of the current signal) is proportional to the dose. The repeatability of the current signals and the dose response of the diode are investigated in several RQR and RQT beam qualities spanning from 50 kV to 150 kV.  The calibration coefficients (Nk) are assessed by linking the diode readings to those from the standard ionization chambers for reference beam qualities (RQR-5 and RQT-9) following the formalism recommended by Technical Reports Series No. 457. To take into account the variations of the X-ray beams related to the correspondent reference beam qualities, the correction factors are also calculated. Despite being close to 1, they evidence the energy dependence of the EPI diode for voltages above 100 kV. 

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References

IAEA, INTERNATIONAL ATOMIC ENERGY AGENCY. Dosimetry in diagnostic radiology - An international code of practice. Technical Reports Series 457, Vienna: IAEA, TRS-457, 2007.

Lindström, G.; Dolenc, I.; Fretwurst, E.; Hönniger, F.; Kramberger, G. Epitaxial silicon detectors for particle tracking – Radiation tolerance at extreme hadron fluencies. Nucl. Instrum. Methods Phys. Res. Sect. A, v. 568, p. 66-71, 2006. DOI: https://doi.org/10.1016/j.nima.2006.05.203

Gonçalves, J. A. C.; Mangiarotti, A.; Antonio, P. L.; Caldas, L. V. E.; Bueno, C. C. Dosimetric parameters and radiation tolerance of epitaxial diodes for diagnostic radiology and computed tomography beams. Radiat. Phys. Chem., v. 223, p. 111926-33, 2024. DOI: https://doi.org/10.1016/j.radphyschem.2024.111926

IEC, INTERNATIONAL ELECTROTECHNICAL COMMISSION. Medical diagnostic X-ray equipment Medical electrical equipment - Dosimeters with ionization chambers and semiconductor detectors as used in X-ray diagnostic imaging. Geneva, IEC 61674, 2024.

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Published

2024-12-16

How to Cite

Calibration coefficients of epitaxial diodes used in diagnostic radiology and computed tomography beams. Brazilian Journal of Radiation Sciences, Rio de Janeiro, Brazil, v. 12, n. 4A (Suppl.), p. e2576, 2024. DOI: 10.15392/2319-0612.2024.2576. Disponível em: https://bjrs.org.br/revista/index.php/REVISTA/article/view/2576. Acesso em: 2 apr. 2025.

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